CdCu2SiS4 is a quaternary chalcogenide compound combining cadmium, copper, silicon, and sulfur elements. This material belongs to the family of semiconductor and photoactive compounds, and is primarily explored in research contexts for optoelectronic and photovoltaic applications rather than established industrial use. The compound's mixed-metal sulfide structure makes it a candidate for thin-film solar cells, photodetectors, and other light-responsive devices where tunable bandgap and semiconductor properties are advantageous.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 74.18 | GPa | — | ||
Poisson's Ratio(ν) | 0.3300 | - | — | ||
Shear Modulus(G) | 28.39 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 4.197 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.040 | eV | — | ||
Dielectric Constant (Relative Permittivity)(εr) | 10.67 | - | — | ||
Magnetic Moment(μB) | 0.000 | µB | — | ||
Piezoelectric Modulus(eij) | 0.5905 | C/m² | — | ||
Seebeck Coefficient(S) | -67.12 | µV/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000 | eV/atom | — | ||
Formation Energy(ΔHf) | -0.5688 | eV/atom | — |