CdBiSe₂I is a layered ternary ceramic compound belonging to the chalcogenide family, combining cadmium, bismuth, selenium, and iodine elements. This is a research-phase material primarily investigated for optoelectronic and photovoltaic applications, where the layered crystal structure and tunable bandgap make it a candidate for solar cells, photodetectors, and infrared sensing devices. The material's weak interlayer bonding and potential for mechanical exfoliation align it with two-dimensional materials research, offering engineers an alternative platform for exploring next-generation semiconductor heterostructures and flexible electronic devices.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 4,974.8 | ksi | DFT · OptB88vdW | ||
Exfoliation Energy(Eexf) | 230.9 | meV/atom | DFT · OptB88vdW | ||
Poisson's Ratio(ν) | 0.3000 | - | DFT · OptB88vdW | ||
Shear Modulus(G) | 2,340.9 | ksi | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.2433 | lb/in³ | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 1.286 | eV | DFT · OptB88vdW | ||
| ↳ | 1.947 | eV | DFT · TBmBJ | ||
High-Frequency Dielectric Constant (ε∞)(ε∞)2 entries | 12.22 | - | DFT · OptB88vdW | ||
| ↳ | 9.464 | - | DFT · TBmBJ | ||
Electron Effective Mass(m*e) | 0.5400 | me | DFT · OptB88vdW · 27°C | ||
Hole Effective Mass(m*h) | 1.027 | me | DFT · OptB88vdW · 27°C | ||
Magnetic Moment(μB) | 0.000 | µB | DFT · OptB88vdW | ||
Thermoelectric Power Factor(PF)2 entries | 0.00198 | W/(m·K²) | DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C | ||
| ↳ | 0.00247 | W/(m·K²) | DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C | ||
Seebeck Coefficient(S)2 entries | -166.5 | μV/K | DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C | ||
| ↳ | 342.4 | μV/K | DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C | ||
Spectroscopic Limited Maximum Efficiency (SLME)(SLME) | 24.10 | % | DFT · TBmBJ |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.01610 | eV/atom | DFT · OptB88vdW | ||
Formation Energy(ΔHf) | -0.4847 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data