CdBiSe₂I is a layered ternary ceramic compound belonging to the chalcogenide family, combining cadmium, bismuth, selenium, and iodine elements. This is a research-phase material primarily investigated for optoelectronic and photovoltaic applications, where the layered crystal structure and tunable bandgap make it a candidate for solar cells, photodetectors, and infrared sensing devices. The material's weak interlayer bonding and potential for mechanical exfoliation align it with two-dimensional materials research, offering engineers an alternative platform for exploring next-generation semiconductor heterostructures and flexible electronic devices.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 34.30 | GPa | — | ||
Exfoliation Energy(Eexf) | 230.9 | meV/atom | — | ||
Poisson's Ratio(ν) | 0.3000 | - | — | ||
Shear Modulus(G) | 16.14 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 6.735 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.286 | eV | — | ||
Magnetic Moment(μB) | 0.000 | µB | — | ||
Seebeck Coefficient(S) | -166.5 | µV/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.01610 | eV/atom | — | ||
Formation Energy(ΔHf) | -0.4847 | eV/atom | — |