CdBiS is a ternary ceramic compound composed of cadmium, bismuth, and sulfur, belonging to the family of chalcogenide semiconductors. This material is primarily investigated in research contexts for optoelectronic and photonic applications, where its layered crystal structure and semiconducting properties offer potential advantages in light emission, detection, or nonlinear optical phenomena. The compound represents an emerging area in materials science exploring alternative wide-bandgap semiconductors, though industrial-scale applications remain limited compared to established binary or ternary semiconductors.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 34.09 | GPa | — | ||
Shear Modulus(G) | 5.350 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 6.896 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | — | ||
Magnetic Moment(μB) | 0.000 | µB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.6715 | eV/atom | — | ||
Formation Energy(ΔHf) | 0.2246 | eV/atom | — |