CdAsP is a III-V semiconductor ceramic compound composed of cadmium, arsenic, and phosphorus. It belongs to the family of direct-bandgap semiconductors used in optoelectronic and infrared device applications. This material is primarily of research and specialized industrial interest rather than mainstream commercial use, valued for its potential in infrared detectors, photovoltaic devices, and high-speed electronic applications where its bandgap properties offer advantages over more common alternatives like GaAs or InP.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 4.955 | kg/m³ | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 0.3640 | eV | DFT · OptB88vdW | ||
| ↳ | 1.039 | eV | DFT · TBmBJ | ||
High-Frequency Dielectric Constant (ε∞)(ε∞)2 entries | 14.90 | - | DFT · OptB88vdW | ||
| ↳ | 10.68 | - | DFT · TBmBJ | ||
Magnetic Moment(μB) | 0.000 | µB | DFT · OptB88vdW | ||
Spectroscopic Limited Maximum Efficiency (SLME)(SLME) | 32.16 | % | DFT · TBmBJ |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.01980 | eV/atom | DFT · OptB88vdW | ||
Formation Energy(ΔHf) | -0.06820 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data