CdAsP

ceramic

· JVASP-102785· CdAsP

CdAsP is a III-V semiconductor ceramic compound composed of cadmium, arsenic, and phosphorus. It belongs to the family of direct-bandgap semiconductors used in optoelectronic and infrared device applications. This material is primarily of research and specialized industrial interest rather than mainstream commercial use, valued for its potential in infrared detectors, photovoltaic devices, and high-speed electronic applications where its bandgap properties offer advantages over more common alternatives like GaAs or InP.

infrared detectorsoptoelectronic deviceshigh-speed electronicsphotovoltaic researchcompound semiconductor researchthermal imaging systems

Compliance & Regulations

?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Density(ρ)	4.955	kg/m³	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.3640	eV	—
Magnetic Moment(μB)	0.000	µB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Energy Above Hull(ΔEhull)	0.01980	eV/atom	—
Formation Energy(ΔHf)	-0.06820	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

CdAsP

Physical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental