CdAsO₂N is a cadmium arsenate nitride ceramic compound, representing a mixed-anion ceramic in the cadmium-arsenic system. This material exists primarily in research and experimental contexts rather than established industrial production, with potential applications in semiconductor or optoelectronic device research due to the wide bandgap characteristics typical of III-V and II-VI compound semiconductors.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | — | ||
Magnetic Moment(μB) | 0.00213 | μB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 1.040 | eV/atom | — |