Cadmium arsenide (CdAs₂) is a III-V compound semiconductor formed from cadmium and arsenic, belonging to the family of binary semiconductors used in specialized optoelectronic and high-frequency applications. Historically explored for infrared detectors, laser diodes, and high-speed electronic devices, CdAs₂ has seen limited commercial deployment compared to more mature compounds like GaAs and InP, largely due to cadmium's toxicity concerns and the superior performance of alternative arsenide semiconductors. The material remains relevant in research contexts for specialized infrared sensing and as a reference compound in semiconductor physics studies, particularly where its specific bandgap or lattice properties offer theoretical advantages over established alternatives.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 5,932 | ksi | — | ||
Poisson's Ratio(ν) | 0.3000 | - | — | ||
Shear Modulus(G) | 3,269.2 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.2019 | lb/in³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 1.000 | eV | — | ||
| ↳ | 0.1090 | eV | — | ||
Dielectric Constant (Relative Permittivity)(εr)2 entries | 22.24 | - | — | ||
| ↳ | 25.52 | - | — | ||
Electronic Dielectric Tensor(ε∞) | Matrix (redacted) | - | — | ||
Total Dielectric Tensor(ε) | Matrix (redacted) | - | — | ||
Magnetic Moment(μB) | 0.000 | µB | — | ||
Piezoelectric Modulus(eij) | 0.02109 | C/m² | — | ||
Seebeck Coefficient(S) | -96.24 | µV/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000 | eV/atom | — | ||
Formation Energy(ΔHf) | -0.05780 | eV/atom | — |