CdAs2 — Properties & Data | MatWorld

CdAs2

Name: CdAs2
Brand: MatWorld

semiconductor

· CdAs2

Cadmium arsenide (CdAs₂) is a III-V compound semiconductor formed from cadmium and arsenic, belonging to the family of binary semiconductors used in specialized optoelectronic and high-frequency applications. Historically explored for infrared detectors, laser diodes, and high-speed electronic devices, CdAs₂ has seen limited commercial deployment compared to more mature compounds like GaAs and InP, largely due to cadmium's toxicity concerns and the superior performance of alternative arsenide semiconductors. The material remains relevant in research contexts for specialized infrared sensing and as a reference compound in semiconductor physics studies, particularly where its specific bandgap or lattice properties offer theoretical advantages over established alternatives.

infrared photodetectorssemiconductor researchhigh-frequency electronicsoptoelectronic devicesbandgap engineering studies

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions
Bulk Modulus(K)	40.90	GPa	DFT · OptB88vdW
Poisson's Ratio(ν)	0.3000	-	DFT · OptB88vdW
Shear Modulus(G)	22.54	GPa	DFT · OptB88vdW

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Density(ρ)	5.588	kg/m³	DFT · OptB88vdW

Verified Unverified Low confidence (<80%) Link to source

Filter by

Method

Carrier

Property	Value	Unit	Conditions
Band Gap(Eg)3 entries	1.000	eV	Measured
↳	0.1090	eV	DFT · OptB88vdW
↳	0.8550	eV	DFT · TBmBJ
Dielectric Constant (Relative Permittivity)(εr)2 entries	22.24	-	DFT · PBE
↳	25.52	-	DFT · OptB88vdW
High-Frequency Dielectric Constant (ε∞)(ε∞)2 entries	17.29	-	DFT · OptB88vdW
↳	11.09	-	DFT · TBmBJ
Electronic Dielectric Tensor(ε∞)	Matrix (redacted)	-	DFT · PBE
Total Dielectric Tensor(ε)	Matrix (redacted)	-	DFT · PBE
Magnetic Moment(μB)	0.000	µB	DFT · OptB88vdW
Piezoelectric Modulus(eij)	0.02109	C/m²	DFT · OptB88vdW
Thermoelectric Power Factor(PF)2 entries	0.00135	W/(m·K²)	DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C
↳	0.00224	W/(m·K²)	DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C
Seebeck Coefficient(S)2 entries	-96.24	μV/K	DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C
↳	240.5	μV/K	DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C
Spectroscopic Limited Maximum Efficiency (SLME)(SLME)	27.76	%	DFT · TBmBJ

N entriesMultiple entries per property — large groups are collapsed; click a summary row to expand. Use filters above to narrow by form, heat treatment, basis, or test environment.

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Energy Above Hull(ΔEhull)	0.000	eV/atom	DFT · OptB88vdW
Formation Energy(ΔHf)	-0.05780	eV/atom	DFT · OptB88vdW

Verified Unverified Low confidence (<80%) Link to source

Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

CdAs2

Mechanical Properties

Physical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control