Cd8As8 is a cadmium arsenide compound semiconductor, a III-V type material belonging to the family of binary semiconductors used primarily in optoelectronic and photovoltaic research. This material is of interest for infrared detection, photovoltaic conversion, and specialized optoelectronic devices where its bandgap and carrier transport properties enable operation in specific wavelength ranges; it remains largely a research-phase material rather than a mainstream commercial compound, making it relevant for advanced device development rather than high-volume applications.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.00720 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.07000 | eV/atom | — |