Cd₅TeS₄ is a quaternary cadmium telluride sulfide ceramic compound belonging to the family of II-VI semiconducting ceramics. This material is primarily of research interest for optoelectronic and photovoltaic applications, where its mixed anion composition (telluride-sulfide) offers tunable bandgap characteristics relative to binary CdTe or CdS semiconductors. While not yet established in high-volume industrial production, Cd₅TeS₄ represents exploration in solid-state physics for photodetectors, thin-film solar cells, and radiation detection devices where cadmium-based semiconductors have proven utility.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 7,557.9 | ksi | — | ||
Poisson's Ratio(ν) | 0.3700 | - | — | ||
Shear Modulus(G) | 2,293 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.1780 | lb/in³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.3970 | eV | — | ||
Magnetic Moment(μB) | 0.000 | µB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.02000 | eV/atom | — | ||
Formation Energy(ΔHf) | -0.5982 | eV/atom | — |