Cd₄GeS₆ is a quaternary chalcogenide ceramic compound composed of cadmium, germanium, and sulfur elements, representing a specialized class of semiconducting ceramics with potential photonic and thermoelectric properties. This material is primarily of research and developmental interest rather than established industrial production, with potential applications in optoelectronic devices, infrared detection systems, and solid-state energy conversion where its specific crystal structure and electronic band gap offer advantages over conventional semiconductors. The cadmium content requires careful handling and environmental consideration, positioning it as a candidate material for niche high-performance applications rather than commodity use.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 4.490 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.236 | eV | — | ||
Magnetic Moment(μB) | 0.000 | µB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000 | eV/atom | — | ||
Formation Energy(ΔHf) | -0.6017 | eV/atom | — |