Cd3P2

semiconductor

· Cd3P2

Cd₃P₂ is a III–V compound semiconductor formed from cadmium and phosphorus, belonging to the cadmium pnictide family of materials. It is primarily investigated in research contexts for optoelectronic and photovoltaic applications, particularly in infrared detection and high-energy radiation sensing, where its wide bandgap and semiconductor properties offer potential advantages in specialized detector systems.

infrared photodetectorsradiation sensingresearch semiconductorsoptoelectronic deviceshigh-energy particle detection

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Density(ρ)	0.1951	lb/in³	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions
Band Gap(Eg)3 entries	0.5400	eV	—
↳	0.5000	eV	—
↳	0.000	eV	—
Magnetic Moment(μB)	0.000	µB	—

N entriesMultiple entries per property — large groups are collapsed; click a summary row to expand. Use filters above to narrow by form, heat treatment, basis, or test environment.

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Property	Value	Unit	Conditions	Source
Energy Above Hull(ΔEhull)	0.2209	eV/atom	—
Formation Energy(ΔHf)	0.1459	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Cd3P2

Physical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control