Cd₃As₂ is a III-V semiconductor compound composed of cadmium and arsenic, belonging to the family of binary chalcogenide and pnictide semiconductors. It is primarily of interest in solid-state physics and materials research for its electronic transport properties, particularly as a potential topological material and for magnetotransport studies. While not widely deployed in mainstream commercial applications, Cd₃As₂ represents an important research compound for investigating exotic electronic states and high-mobility carrier systems relevant to next-generation quantum and optoelectronic device concepts.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 6,783.4 | ksi | — | ||
Poisson's Ratio(ν) | 0.3900 | - | — | ||
Shear Modulus(G) | 1,667.9 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.2173 | lb/in³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 0.2400 | eV | — | ||
| ↳ | 0.000 | eV | — | ||
Magnetic Moment(μB) | 0.000 | µB | — | ||
Seebeck Coefficient(S) | -6.590 | µV/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.1512 | eV/atom | — | ||
Formation Energy(ΔHf)2 entries | -0.07898 | eV/atom | — | ||
| ↳ | 0.09357 | eV/atom | — |