Cd₃As₁I₃ is a ternary semiconductor compound combining cadmium, arsenic, and iodine elements. This material belongs to the family of halide perovskites and cadmium-based semiconductors, though it remains primarily in the research and development stage rather than established in widespread commercial production. Interest in this compound stems from its potential optoelectronic properties and its place within the broader exploration of novel semiconductor compositions for next-generation photovoltaics, photodetectors, and other quantum-engineered devices.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 2,760.5 | ksi | — | ||
Shear Modulus(G) | 1,108.1 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.8537 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.4060 | eV/atom | — |