Cd2SnGeAs4 is a quaternary compound semiconductor belonging to the II-IV-IV-V class of materials, combining cadmium, tin, germanium, and arsenic in a crystalline ceramic matrix. This material is primarily investigated in research contexts for optoelectronic and photovoltaic applications, particularly in infrared detection and solid-state radiation sensing where its bandgap and crystal structure offer potential advantages over simpler binary or ternary semiconductors. While not yet widely deployed in mainstream commercial products, compounds in this family are explored for niche high-performance applications requiring tailored electronic properties and environmental stability.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 5.346 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.1180 | eV | — | ||
Magnetic Moment(μB) | 0.000 | µB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000 | eV/atom | — | ||
Formation Energy(ΔHf) | -0.09261 | eV/atom | — |