Cd2GaAgS4 is a quaternary semiconductor compound belonging to the family of chalcogenides, combining cadmium, gallium, silver, and sulfur elements. This material is primarily studied in research contexts for photovoltaic and optoelectronic applications, where its bandgap and crystal structure offer potential advantages in light absorption and charge transport. Engineers investigating advanced solar cells, photodetectors, or nonlinear optical devices may consider this compound as an alternative to more conventional III-V or II-VI semiconductors, though it remains largely in the development phase rather than established industrial production.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 8,654.4 | ksi | — | ||
Poisson's Ratio(ν) | 0.3700 | - | — | ||
Shear Modulus(G) | 2,564.3 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.1672 | lb/in³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.9950 | eV | — | ||
Magnetic Moment(μB) | 0.000 | µB | — | ||
Seebeck Coefficient(S) | -50.17 | µV/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.00200 | eV/atom | — | ||
Formation Energy(ΔHf) | -0.6096 | eV/atom | — |