Cadmium telluride (CdTe) is a II-VI compound semiconductor formed from cadmium and tellurium, notable for its direct bandgap and high absorption coefficient in the visible to infrared spectrum. It is widely used in photovoltaic solar cells and gamma-ray/X-ray detectors, where its ability to convert photons efficiently into electrical signals makes it superior to silicon-based alternatives in these specific applications. CdTe's popularity in radiation detection and thin-film photovoltaics stems from its optimal bandgap energy and strong interaction with high-energy photons, though toxicity concerns and manufacturing complexity limit its use compared to less toxic semiconductor alternatives.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 5,476 | ksi | — | ||
Shear Modulus(G) | 1,812 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.7136 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.4040 | eV/atom | — |