Cd₂Sn₂Sb₄ is a quaternary semiconductor compound belonging to the chalcogenide family, composed of cadmium, tin, and antimony elements. This material is primarily of research interest for thermoelectric and optoelectronic applications, where layered chalcogenide semiconductors show promise for energy conversion and photonic devices operating in the infrared spectrum. Its potential advantages over conventional binary and ternary semiconductors include tunable band structure and enhanced phonon scattering for improved thermoelectric efficiency, though industrial-scale deployment remains limited compared to established alternatives like bismuth telluride.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 38.37 | GPa | — | ||
Shear Modulus(G) | 17.30 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.05610 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.01400 | eV/atom | — |