Cd2S2O8 is an oxysulfide semiconductor compound combining cadmium, sulfur, and oxygen in a mixed-anion structure. This material is primarily of research and developmental interest rather than established industrial production, belonging to the broader family of cadmium chalcogenides and oxychalcogenides being explored for optoelectronic and photovoltaic applications. The mixed anion chemistry offers potential for band gap engineering and tailored electronic properties compared to simple binary cadmium sulfides, though cadmium's toxicity and regulatory constraints limit practical deployment in many regions.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 10,789.2 | ksi | — | ||
Shear Modulus(G) | 4,237 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 3.364 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -1.426 | eV/atom | — |