Cd₂In₄S₈ is a quaternary semiconductor compound combining cadmium, indium, and sulfur in a defect spinel or layered structure. This material belongs to the family of II-III-VI semiconductors and is primarily of research interest rather than established industrial production, with potential applications in optoelectronics and photovoltaic devices due to its tunable bandgap and layered electronic properties. Engineers would consider this compound for niche applications requiring semiconductors with specific optical or electrical characteristics not readily available in more conventional III-V or II-VI materials.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 9,703 | ksi | — | ||
Shear Modulus(G) | 3,611.4 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.038 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.6630 | eV/atom | — |