Cd₂In₄O₈ is an ternary oxide semiconductor compound combining cadmium, indium, and oxygen in a mixed-valence structure. This material belongs to the spinel or inverse-spinel family of oxides and is primarily studied in research contexts for optoelectronic and photocatalytic applications. It is notable within the cadmium-indium oxide family for its potential band gap engineering and visible-light activity, offering an alternative to simpler binary oxides for applications requiring tuned electronic properties.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.6343 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -1.513 | eV/atom | — |