Cd2 In2 Ga2 S8

semiconductor

· Cd2 In2 Ga2 S8

Cd₂In₂Ga₂S₈ is a quaternary chalcogenide semiconductor compound combining cadmium, indium, gallium, and sulfur in a layered crystal structure. This material belongs to the family of wide-bandgap semiconductors and is primarily of research interest for its potential in optoelectronic and photovoltaic applications, where the tunable bandgap and layered structure offer advantages for light emission, detection, and energy conversion devices. The mixed-cation composition allows engineers to engineer electronic and optical properties beyond what single-cation alternatives provide, making it relevant for next-generation solar cells, photodetectors, and potentially quantum-confined device architectures.

photovoltaic researchphotodetectorsoptoelectronic deviceswide-bandgap semiconductorsexperimental thin filmslight-emitting applications

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Bulk Modulus(K)	40.76	GPa	—
Shear Modulus(G)	18.07	GPa	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.5788	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-0.6250	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Cd2 In2 Ga2 S8

Mechanical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control