Cd₂Ge₄O₁₀ is a cadmium germanate oxide semiconductor compound belonging to the family of metal oxide semiconductors with potential applications in photonics and optoelectronic devices. This material remains primarily in the research and development phase, being studied for its electronic band structure and optical properties rather than established in high-volume industrial production. The germanate oxide framework and cadmium incorporation suggest potential for applications requiring wide band gap semiconductors, though researchers continue to evaluate its performance relative to more mature alternatives like gallium nitride and zinc oxide in commercial optoelectronic systems.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 20,582.5 | ksi | — | ||
Shear Modulus(G) | 9,324 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.655 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -1.630 | eV/atom | — |