Cd2 Bi2 Se4 I2
semiconductorCd₂Bi₂Se₄I₂ is a layered halide semiconductor compound combining cadmium, bismuth, selenium, and iodine—a member of the emerging family of mixed-halide and mixed-chalcogenide semiconductors. This material is primarily of research interest for optoelectronic and photovoltaic applications, where its tunable bandgap and layered crystal structure offer potential advantages in light absorption, charge transport, and device fabrication compared to conventional silicon or perovskite alternatives. Due to its composition and structure, it belongs to the broader class of materials under investigation for next-generation solar cells, photodetectors, and radiation detection devices, though industrial adoption remains limited and further development is needed to optimize stability and scalability.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | — | ksi | — | — | |
Shear Modulus(G) | — | ksi | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — | eV | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | — | eV/atom | — | — |