Cd₂Bi₂S₄Br₂ is a mixed-halide cadmium bismuth chalcogenide semiconductor belonging to the family of layered ternary and quaternary semiconducting compounds. This is primarily a research material of interest for optoelectronic and photovoltaic applications, where the combination of cadmium, bismuth, sulfur, and bromine creates tunable bandgap and electronic properties distinct from simpler binary semiconductors. The material represents an emerging class of environmentally motivated alternatives to lead-based perovskites and conventional III–V semiconductors, though it remains largely in the experimental phase with potential applications in thin-film photovoltaics, photodetectors, and light-emitting devices.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.782 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.6410 | eV/atom | — |