CdOsO₃ is a ternary oxide semiconductor combining cadmium, osmium, and oxygen in a perovskite-related crystal structure. This is primarily a research material studied for its electronic and photocatalytic properties rather than an established industrial compound. The material belongs to the family of mixed-metal oxides being investigated for advanced energy conversion, photocatalysis, and potentially optoelectronic applications where the combination of cadmium and osmium d-electrons may enable unique band structure characteristics.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.00600 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.7990 | eV/atom | — |