Cd₁In₂Te₄ is a ternary III-V semiconductor compound combining cadmium, indium, and tellurium. This material belongs to the chalcopyrite semiconductor family and is primarily investigated for infrared detection and photovoltaic applications where its bandgap and optical properties offer advantages in specific wavelength ranges. While less commercially established than binary alternatives like CdTe or InTe, this ternary composition is pursued in research contexts for tunable optoelectronic performance and potential use in advanced detector arrays and space-qualified imaging systems.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 3,795.2 | ksi | — | ||
Shear Modulus(G) | 2,117.6 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.4106 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.3510 | eV/atom | — |