Cd₁In₂Se₄ is a ternary II-VI semiconductor compound composed of cadmium, indium, and selenium, belonging to the chalcogenide semiconductor family. This material is primarily investigated in research and development contexts for optoelectronic and photovoltaic applications, where its tunable bandgap and layered crystal structure offer potential advantages for thin-film solar cells, photodetectors, and infrared sensing devices compared to binary semiconductors.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 33.46 | GPa | DFT · OptB88vdW | ||
Shear Modulus(G) | 17.59 | GPa | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.8508 | eV | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.5570 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data