Cd1As2O6 is an inorganic compound semiconductor belonging to the cadmium arsenate oxide family, combining cadmium, arsenic, and oxygen in a crystalline structure. This material is primarily of research and development interest rather than established industrial production, with potential applications in optoelectronic devices and specialized semiconductor research where arsenic-based compounds offer unique band gap properties. As a cadmium-containing material, engineering consideration must account for toxicity regulations and handling requirements, making it suitable only for applications where its specific electronic or photonic properties justify the material and processing constraints.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 21,694.5 | ksi | — | ||
Shear Modulus(G) | 9,889.7 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 2.121 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -1.321 | eV/atom | — |