Cd0.9Te0.9Al0.1Sb0.1

semiconductor

· Cd0.9Te0.9Al0.1Sb0.1

Cd0.9Te0.9Al0.1Sb0.1 is a quaternary semiconductor alloy based on cadmium telluride with aluminum and antimony dopants, designed to modify the electronic and optical properties of the CdTe binary compound. This is primarily a research and development material rather than a mature commercial product; it belongs to the II-VI semiconductor family and is investigated for photovoltaic and radiation detection applications where bandgap engineering and carrier transport optimization are critical. The substitution of aluminum and antimony into the CdTe lattice aims to tune the material's energy gap and improve device performance in specific spectral ranges or detection scenarios.

photovoltaic cells and solar panelsgamma-ray and X-ray detectorsradiation detection sensorsbandgap engineering researchoptoelectronic device developmentmaterials research and characterization

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	1.360	eV	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Cd0.9Te0.9Al0.1Sb0.1

Electrical Properties

Regulatory Screening

Environmental

Export Control