Cd0.8In2.1Ag0.1Te4

semiconductor

· Cd0.8In2.1Ag0.1Te4

Cd0.8In2.1Ag0.1Te4 is a quaternary semiconductor compound combining cadmium, indium, silver, and tellurium—a research-phase material within the family of II-VI and I-III-VI₂ semiconductors. This composition is designed for optoelectronic and radiation detection applications where tuned bandgap and carrier transport properties are required, offering potential advantages over binary or ternary alternatives in specific wavelength ranges or detector configurations. The material remains largely experimental; engineers would evaluate it for niche applications in infrared detectors, X-ray/gamma-ray sensing, or high-energy physics instrumentation where the quaternary doping strategy provides performance optimization that simpler compounds cannot achieve.

infrared detectorsradiation detectionhigh-energy physics instrumentationoptoelectronic devicescompound semiconductor researchadvanced sensing applications

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.2900	eV	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Cd0.8In2.1Ag0.1Te4

Electrical Properties

Regulatory Screening

Environmental

Export Control