Cd0.75In2.1Ag0.2Te4 — Properties & Data | MatWorld

Cd0.75In2.1Ag0.2Te4

Name: Cd0.75In2.1Ag0.2Te4
Brand: MatWorld

semiconductor

· Cd0.75In2.1Ag0.2Te4

Cd0.75In2.1Ag0.2Te4 is a quaternary semiconductor compound combining cadmium, indium, silver, and tellurium in a mixed-cation telluride structure. This is a research-phase material explored for its potential in infrared detection and photovoltaic applications, where the specific cation composition may be tailored to optimize band gap and carrier transport properties relative to simpler ternary tellurides like CdTe or InTe.

infrared detectorsexperimental photovoltaicsradiation detectionoptoelectronic researchhigh-energy physics instrumentation

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.5400	eV	Measured

Verified Unverified Low confidence (<80%) Link to source

Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Cd0.75In2.1Ag0.2Te4

Electrical Properties

Regulatory Screening

Environmental

Export Control