Cd0.75In2.1Ag0.2Te4
semiconductor· Cd0.75In2.1Ag0.2Te4
Cd0.75In2.1Ag0.2Te4 is a quaternary semiconductor compound combining cadmium, indium, silver, and tellurium in a mixed-cation telluride structure. This is a research-phase material explored for its potential in infrared detection and photovoltaic applications, where the specific cation composition may be tailored to optimize band gap and carrier transport properties relative to simpler ternary tellurides like CdTe or InTe.
infrared detectorsexperimental photovoltaicsradiation detectionoptoelectronic researchhigh-energy physics instrumentation
Compliance & Regulations
?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — | eV | — | — |
Verified Unverified Low confidence (<80%) Link to source
Regulatory Screening
Environmental
Export Control
RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.