Cd0.5In2.2Ag0.4Te4

semiconductor

· Cd0.5In2.2Ag0.4Te4

Cd0.5In2.2Ag0.4Te4 is a quaternary chalcogenide semiconductor compound combining cadmium, indium, silver, and tellurium in a mixed-cation telluride structure. This is a research-phase material studied primarily for its potential in infrared detection and radiation sensing applications, where the telluride family's wide bandgap tunability and high atomic number elements offer advantages for photon absorption in the infrared spectrum. The material's multi-element composition allows researchers to engineer electronic properties distinct from binary or ternary alternatives like CdTe or InTe, making it of particular interest for optimizing detector performance where background noise rejection and spectral selectivity are critical.

infrared detectorsradiation sensingX-ray imaging researchspectroscopy detectorsoptoelectronic devicesmaterials research

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.1900	eV	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Cd0.5In2.2Ag0.4Te4

Electrical Properties

Regulatory Screening

Environmental

Export Control