Cd0.1Ga0.9Sb0.9Te0.1

semiconductor

· Cd0.1Ga0.9Sb0.9Te0.1

Cd₀.₁Ga₀.₉Sb₀.₉Te₀.₁ is a narrow-bandgap III-V semiconductor alloy combining cadmium, gallium, antimony, and tellurium—a quaternary compound engineered for infrared detection and sensing applications. This material belongs to the family of tunable narrow-gap semiconductors used primarily in infrared photondetectors and thermal imaging systems, where the controlled substitution of cadmium and tellurium into gallium antimonide enables wavelength tuning across the mid- and long-wave infrared regions. The composition is noteworthy for research and specialized military/defense applications rather than high-volume commercial use, offering designers a platform to optimize bandgap energy for specific infrared wavelengths where alternatives like HgCdTe may face regulatory or manufacturing constraints.

infrared photodetectorsthermal imaging sensorsmid-wave infrared detectionlong-wave infrared opticsdefense/surveillance systemsresearch semiconductor platforms

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.7800	eV	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Cd0.1Ga0.9Sb0.9Te0.1

Electrical Properties

Regulatory Screening

Environmental

Export Control