Cd0.07In0.93Te0.07As0.93

semiconductor

· Cd0.07In0.93Te0.07As0.93

Cd₀.₀₇In₀.₉₃Te₀.₀₇As₀.₉₃ is a quaternary III-V semiconductor alloy based on indium arsenide (InAs) with cadmium telluride (CdTe) additions, designed to engineer the bandgap and lattice parameters for infrared and optoelectronic applications. This is a research-grade compound semiconductor where controlled doping of Cd and Te into the InAs matrix enables tuning of electronic properties—particularly bandgap energy and carrier mobility—for specialized detection and emission devices in the mid-to-far infrared spectrum. The material belongs to the broader family of narrow-bandgap semiconductors used in thermal imaging, gas sensing, and quantum-well heterostructure devices where standard silicon or gallium arsenide are inadequate.

infrared detectorsthermal imaging sensorsquantum well structuresnarrow-bandgap semiconductorsresearch optoelectronicsinfrared LEDs and lasers

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.6800	eV	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

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RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Cd0.07In0.93Te0.07As0.93

Electrical Properties

Regulatory Screening

Environmental

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