Cd0.05Ga0.95Sb0.95Te0.05

semiconductor

· Cd0.05Ga0.95Sb0.95Te0.05

Cd₀.₀₅Ga₀.₉₅Sb₀.₉₅Te₀.₀₅ is a narrow-bandgap III-V semiconductor alloy derived from the GaSb-GaTe pseudo-binary system, with minor cadmium doping to engineer bandgap and carrier properties. This is primarily a research-phase material rather than a production-volume compound, developed for infrared detection and thermal imaging applications where bandgap engineering in the 2–5 µm wavelength range is critical. The material's significance lies in its ability to operate in the mid-wave infrared (MWIR) region while potentially offering improved thermal stability or lattice matching compared to conventional GaSb or InSb detectors.

infrared detectorsthermal imaging sensorsmid-wave IR (MWIR) applicationsspace-based remote sensingresearch bandgap engineeringnarrowband semiconductor alloys

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.7400	eV	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Cd0.05Ga0.95Sb0.95Te0.05

Electrical Properties

Regulatory Screening

Environmental

Export Control