Cd0.04In0.96Te0.04As0.96

semiconductor

· Cd0.04In0.96Te0.04As0.96

Cd₀.₀₄In₀.₉₆Te₀.₀₄As₀.₉₆ is a narrow-bandgap III-V semiconductor alloy based on indium arsenide (InAs) with cadmium telluride (CdTe) doping, engineered to tune the electronic bandgap for infrared applications. This quaternary compound is primarily a research and specialized optoelectronic material used in long-wavelength infrared detectors and sensing systems where sensitivity to mid- to far-infrared radiation is critical. The cadmium and tellurium incorporation modifies the lattice structure and bandgap of the parent InAs compound, making it attractive for thermal imaging, spectroscopy, and military/aerospace sensor applications where conventional silicon or standard InAs detectors are insufficient.

infrared detectorsthermal imaging sensorsspectroscopic instrumentationmilitary/aerospace sensingcryogenic photodetectorsresearch semiconductors

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.6900	eV	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Cd0.04In0.96Te0.04As0.96

Electrical Properties

Regulatory Screening

Environmental

Export Control