Cd0.03In0.97Te0.03As0.97

Cd₀.₀₃In₀.₉₇Te₀.₀₃As₀.₉₇ is a narrow-bandgap III-V semiconductor alloy, a dilute cadmium and tellurium-doped indium arsenide compound designed to fine-tune electronic and optical properties for infrared applications. This material belongs to the InAs family with minor compositional modifications; it is primarily a research-phase compound rather than a widely commercialized material. The small cadmium and tellurium additions alter the band structure to enable sensitivity in the mid- to long-wavelength infrared region, making it relevant for detector arrays, thermal imaging sensors, and high-speed electronics where lattice-matched or near-lattice-matched heterostructures are required.