Cd0.01In0.99Te0.01As0.99

semiconductor

· Cd0.01In0.99Te0.01As0.99

Cd0.01In0.99Te0.01As0.99 is a quaternary III-V compound semiconductor based on indium arsenide (InAs) with small additions of cadmium and tellurium. This material is primarily of research and development interest, designed to engineer the bandgap and carrier transport properties of the InAs host lattice for specialized optoelectronic and high-frequency applications.

infrared photodetectorshigh-mobility transistorsquantum well structuresmillimeter-wave electronicsexperimental semiconductor research

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.7600	eV	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Cd0.01In0.99Te0.01As0.99

Electrical Properties

Regulatory Screening

Environmental

Export Control