Cd0.01Ga0.99Sb0.99Te0.01

semiconductor

· Cd0.01Ga0.99Sb0.99Te0.01

Cd₀.₀₁Ga₀.₉₉Sb₀.₉₉Te₀.₀₁ is a ternary III-V semiconductor alloy based on gallium antimonide (GaSb) with cadmium and tellurium dopants, engineered to tune the bandgap and lattice parameters for infrared and optoelectronic applications. This heavily GaSb-weighted composition represents a research-phase material designed to optimize thermal stability and carrier transport in mid-wave or long-wave infrared detectors, where direct bandgap engineering through minor alloying can improve device performance without sacrificing lattice compatibility. The cadmium and tellurium additions are typical dopants in GaSb-based systems for tuning the bandgap energy and carrier concentration in photodetectors and thermal imaging sensors that operate in the 3–14 μm range.

infrared detectorsthermal imaging sensorsoptoelectronic bandgap engineeringmid-wave IR detectorssemiconductor heterostructuresresearch-phase compound

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.7200	eV	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Cd0.01Ga0.99Sb0.99Te0.01

Electrical Properties

Regulatory Screening

Environmental

Export Control