CaGaN (calcium gallium nitride) is an emerging wide-bandgap semiconductor ceramic compound combining calcium, gallium, and nitrogen elements. This material belongs to the family of III-V nitride semiconductors and remains largely in the research and development phase, with potential applications in high-power electronics, optoelectronics, and extreme-environment devices where conventional semiconductors face thermal or voltage limitations.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 1,681 | ksi | — | ||
Shear Modulus(G) | -2,040.7 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.1540 | lb/in³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | — | ||
Magnetic Moment(μB) | 0.000 | µB | — | ||
Seebeck Coefficient(S) | -8.660 | µV/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.01480 | eV/atom | — | ||
Formation Energy(ΔHf) | -0.8913 | eV/atom | — |