CaGaN
ceramic· JVASP-15783· CaGaN
CaGaN (calcium gallium nitride) is an emerging wide-bandgap semiconductor ceramic compound combining calcium, gallium, and nitrogen elements. This material belongs to the family of III-V nitride semiconductors and remains largely in the research and development phase, with potential applications in high-power electronics, optoelectronics, and extreme-environment devices where conventional semiconductors face thermal or voltage limitations.
wide-bandgap semiconductor researchhigh-temperature electronicspower device developmentoptoelectronic componentsexperimental RF/microwave circuitsnext-generation nitride devices
Compliance & Regulations
?Conflict Free?RoHS?REACH?TSCA?Prop 65
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 11.59 | GPa | — | ||
Shear Modulus(G) | -14.07 | GPa | — |
Verified Unverified Low confidence (<80%) Link to source
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 4.262 | kg/m³ | — |
Verified Unverified Low confidence (<80%) Link to source
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | — | ||
Magnetic Moment(μB) | 0.000 | µB | — | ||
Seebeck Coefficient(S) | -8.660 | µV/K | — |
Verified Unverified Low confidence (<80%) Link to source
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.01480 | eV/atom | — | ||
Formation Energy(ΔHf) | -0.8913 | eV/atom | — |
Verified Unverified Low confidence (<80%) Link to source
Regulatory Screening
Environmental
RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.