CaBi₂O₄ is a bismuth-based oxide semiconductor compound in the perovskite-related ceramic family, currently of primary interest in materials research rather than established commercial production. This material is being investigated for photocatalytic and optoelectronic applications, particularly where bismuth oxides offer advantages in visible-light absorption and band gap tuning compared to traditional wide-gap semiconductors. Engineers evaluating CaBi₂O₄ would consider it for next-generation photocatalytic water treatment, environmental remediation, or photovoltaic device research where bismuth compounds provide cost and environmental benefits over rare-earth or toxic alternatives.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 107.6 | GPa | — | ||
Poisson's Ratio(ν) | 0.4000 | - | — | ||
Shear Modulus(G) | 24.35 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 7.059 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 3.080 | eV | — | ||
| ↳ | 2.425 | eV | — | ||
Magnetic Moment(μB) | 0.000 | µB | — | ||
Seebeck Coefficient(S) | -175.4 | µV/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.00960 | eV/atom | — | ||
Formation Energy(ΔHf) | -1.911 | eV/atom | — |