CaAlAs is an experimental III-V semiconductor compound combining calcium, aluminum, and arsenic. While not commercially established like conventional GaAs or InP semiconductors, materials in this family are investigated for optoelectronic and photovoltaic applications where lattice-matched heterostructures or wide bandgap properties could offer advantages over traditional III-V compounds. Engineers considering CaAlAs would typically be working in research environments exploring next-generation semiconductor device architectures or high-efficiency solar cell designs.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 30.59 | GPa | — | ||
Poisson's Ratio(ν) | 0.4500 | - | — | ||
Shear Modulus(G) | 6.810 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 2.911 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | — | ||
Magnetic Moment(μB) | 0.000 | µB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 1.147 | eV/atom | — | ||
Formation Energy(ΔHf) | 0.2925 | eV/atom | — |