Ca6 Ga4 N8

semiconductor

· Ca6 Ga4 N8

Ca₆Ga₄N₈ is a wide-bandgap semiconductor compound in the nitride family, synthesized by combining calcium, gallium, and nitrogen in a ternary ceramic structure. This is a research-stage material studied primarily for its potential in optoelectronic and power electronic applications, offering the possibility of tunable bandgap and thermal stability advantages over conventional III-N semiconductors like GaN. Engineering interest centers on exploring whether this calcium-gallium-nitride composition could enable next-generation UV emitters, high-temperature electronics, or power conversion devices in environments where standard nitride semiconductors reach performance limits.

UV/violet light emitters (research)High-temperature power electronics (exploratory)Wide-bandgap semiconductor developmentOptoelectronic research devicesNext-generation nitride semiconductorsThermal management systems (advanced)

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	2.253	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-0.9330	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Ca6 Ga4 N8

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control