Ca₄Sn₂N₄ is an experimental nitride semiconductor compound combining calcium and tin in a quaternary nitride structure. This material belongs to the wide-bandgap semiconductor family and is primarily investigated in research contexts for next-generation optoelectronic and power electronic applications where conventional semiconductors reach performance limits. Its structural rigidity and nitride chemistry position it as a candidate for high-temperature, high-power, or radiation-resistant device architectures, though it remains in early-stage development with limited commercial deployment.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 75.10 | GPa | — | ||
Shear Modulus(G) | 47.42 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.8344 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.7490 | eV/atom | — |