Ca₃SnN is an experimental ternary nitride semiconductor compound belonging to the family of metal nitrides, which are being investigated for next-generation electronic and optoelectronic devices. This material represents an emerging class of wide-bandgap semiconductors with potential advantages in high-power, high-frequency, and high-temperature applications where conventional semiconductors like silicon or gallium nitride reach their limits. Research into Ca₃SnN and related nitride systems is driven by the need for materials with improved thermal stability, wider band gaps, and novel electronic properties for future device architectures.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 21.33 | GPa | — | ||
Shear Modulus(G) | 15.14 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.1610 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 0.6640 | eV/atom | — |