Ca3 Mn2 Ga2 O10

semiconductor

· Ca3 Mn2 Ga2 O10

Ca₃Mn₂Ga₂O₁₀ is an oxide semiconductor compound combining calcium, manganese, and gallium in a mixed-metal oxide structure. This is a research-stage material being studied for optoelectronic and photocatalytic applications, particularly in the semiconductor and materials chemistry communities exploring novel band-gap oxides with potential for visible-light absorption and charge-carrier properties.

photocatalysis researchoptoelectronic devices (experimental)visible-light semiconductor applicationsoxide semiconductor developmentsolar energy conversion (R&D phase)functional ceramics research

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.01730	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-2.367	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Ca3 Mn2 Ga2 O10

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control